Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell
Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back su...
Saved in:
Main Authors: | , , , , , |
---|---|
其他作者: | |
格式: | Conference Paper |
出版: |
Institute of Electrical and Electronics Engineers Inc.
2023
|
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
總結: | Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back surface fields; Band diagrams; Concentrated solar cells; Gallium arsenide cells; Illumination conditions; Silvaco; TCAD software; Solar cells |
---|