Effects of anodisation parameters on thin film properties: a review
CMOS integrated circuits; Metallic compounds; Metals; MOS devices; Oxide semiconductors; Temperature; Thin films; Anodisation; Anodising; Applied voltages; Complementary metal oxide semiconductors; Metal oxide film; Nano-structured; Thickness; Thin-film properties; Oxide films
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Taylor and Francis Ltd.
2023
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my.uniten.dspace-232492023-05-29T14:38:47Z Effects of anodisation parameters on thin film properties: a review Wong Y.H. Affendy M.G. Lau S.K. Teh P.C. Lee H.J. Tan C.Y. Ramesh S. 36605495300 55260141000 57193418930 57193423703 57190622221 16029485400 41061958200 CMOS integrated circuits; Metallic compounds; Metals; MOS devices; Oxide semiconductors; Temperature; Thin films; Anodisation; Anodising; Applied voltages; Complementary metal oxide semiconductors; Metal oxide film; Nano-structured; Thickness; Thin-film properties; Oxide films Electrochemical anodisation is a well-received method in the complementary metal-oxide-semiconductor field as it is advantageous; best performed at room temperature which translates into being more affordable and a simple alternative to form nano-structured oxide films for different metals. The quintessential parameters involved allow numerous formations of metal oxide films according to desired morphology and thickness. Therefore, this paper aims to review the effects of anodising parameters such as applied voltage, concentration, temperature, time, current density and post-anodisation annealing among them. � 2016 Institute of Materials, Minerals and Mining. Final 2023-05-29T06:38:46Z 2023-05-29T06:38:46Z 2017 Review 10.1080/02670836.2016.1193654 2-s2.0-85013768498 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85013768498&doi=10.1080%2f02670836.2016.1193654&partnerID=40&md5=ff7cac4b55c2dd86c31296dbcdb0fc34 https://irepository.uniten.edu.my/handle/123456789/23249 33 6 699 711 Taylor and Francis Ltd. Scopus |
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| description |
CMOS integrated circuits; Metallic compounds; Metals; MOS devices; Oxide semiconductors; Temperature; Thin films; Anodisation; Anodising; Applied voltages; Complementary metal oxide semiconductors; Metal oxide film; Nano-structured; Thickness; Thin-film properties; Oxide films |
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36605495300 |
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36605495300 Wong Y.H. Affendy M.G. Lau S.K. Teh P.C. Lee H.J. Tan C.Y. Ramesh S. |
| format |
Review |
| author |
Wong Y.H. Affendy M.G. Lau S.K. Teh P.C. Lee H.J. Tan C.Y. Ramesh S. |
| spellingShingle |
Wong Y.H. Affendy M.G. Lau S.K. Teh P.C. Lee H.J. Tan C.Y. Ramesh S. Effects of anodisation parameters on thin film properties: a review |
| author_sort |
Wong Y.H. |
| title |
Effects of anodisation parameters on thin film properties: a review |
| title_short |
Effects of anodisation parameters on thin film properties: a review |
| title_full |
Effects of anodisation parameters on thin film properties: a review |
| title_fullStr |
Effects of anodisation parameters on thin film properties: a review |
| title_full_unstemmed |
Effects of anodisation parameters on thin film properties: a review |
| title_sort |
effects of anodisation parameters on thin film properties: a review |
| publisher |
Taylor and Francis Ltd. |
| publishDate |
2023 |
| _version_ |
1806424521205350400 |
| score |
13.214268 |