Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

• Main Authors: Roslan, A.F., Salehuddin, F., Zain, A.S.M., Kaharudin, K.E., Ahmad, I., Hazura, H., Hanim, A.R., Idris, S.K.
• Format: Article
• Language: English
• Published: 2020

This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughou...