Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))

• Main Authors: Siti Kudnie, Sahari, Nik Amni Fathi, Nik Zaini Fathi, Azrul Azlan, Hamzah, Norsuzailina, Mohamed Sutan, Zaidi, Embong, Suhana, Muhamed Sultan, Muhammad, Kashif, Marini, Sawawi, Lilik, Hasanah, Rohana, Sapawi, Kuryati, Kipli, Abdul Rahman, Kram, Nazreen, Junaidi
• Format: Article
• Language: English
• Published: Penerbit UKM 2019
• Subjects: TP Chemical technology
• Online Access: http://ir.unimas.my/id/eprint/26219/1/SITI%20KUDNIE.pdf; http://ir.unimas.my/id/eprint/26219/; http://www.ukm.my/jsm/

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanatio...