Si-quantum Dots (QD) and SiO2 tunnel barriers
Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...
Saved in:
Main Authors: | Sutikno, Madnasri, Uda, Hashim, Prof. Dr., Zul Azhar, Zahid Jamal, Prof. Dr. |
---|---|
Other Authors: | smadnasri@yahoo.com |
Format: | Article |
Language: | English |
Published: |
Universiti Malaysia Perlis (UniMAP)
2010
|
Subjects: | |
Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/9934 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Investigated optical studies of Si quantum dot
by: Y., Al-Douri, et al.
Published: (2011) -
Formation of Si nanostructure using size reduction technique
by: Th., Shikra Dhahi, et al.
Published: (2012) -
Synthesis of silicon carbide nanotubes from carbon nanotubes and silicon dioxide by microwaves irradiation
by: Voon, Chun Hong, et al.
Published: (2012) -
Synthesis and characterization of TiO₂/SiO₂ thin film via SolGel method
by: Dewi Suriyani, Che Halin, et al.
Published: (2022) -
Functionalization of Si Nanowire Surfaces to Create Interactive Mechanism for Heavy Metals Detection Application
by: Nuri A.KH., Ehfaed, et al.
Published: (2020)