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Si-quantum Dots (QD) and SiO2 tunnel barriers

Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...

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書誌詳細
主要な著者:	Sutikno, Madnasri, Uda, Hashim, Prof. Dr., Zul Azhar, Zahid Jamal, Prof. Dr.
その他の著者:	smadnasri@yahoo.com
フォーマット:	論文
言語:	English
出版事項:	Universiti Malaysia Perlis (UniMAP) 2010
主題:	Explore > Penerbitan universiti UniMAP > Publications UniMAP > Research and development SiO2 tunnel barriers Silicon-on-insulator (SOI) Si-quantum Dots (QD)
オンライン･アクセス:	http://dspace.unimap.edu.my/xmlui/handle/123456789/9934
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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