Si-quantum Dots (QD) and SiO2 tunnel barriers
Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...
Saved in:
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis (UniMAP)
2010
|
| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/9934 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation of a nanometerscale
island sandwiched between two small capacitors
having a very thin insulator to allow electrons to pass
through in a stochastic process, known as PADOX. This
oxidation creates an island sandwiched between two
tunnel barriers which constitutes a SET. The constriction of
Si causes automatic tunnel barrier formation between
source–QD and drain-QD. The unique characteristics of
PADOX arises from i) the suppression of oxidation by
mechanical stress, and ii) the oxidation from below. |
|---|