Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
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| 格式: | Article |
| 语言: | English |
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Universiti Malaysia Perlis
2010
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| 在线阅读: | http://dspace.unimap.edu.my/xmlui/handle/123456789/9054 |
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