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Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC

International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.

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Main Authors: Kuan, Yew Cheong, Wei, Chong Goh
Other Authors: cheong@eng.usm.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2010
Subjects:
Semiconductor-insulator interfaces
Dielectric phenomena
Surface roughening
4H SiC
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/9054
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spelling my.unimap-90542010-08-24T08:08:28Z Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC Kuan, Yew Cheong Wei, Chong Goh cheong@eng.usm.my Semiconductor-insulator interfaces Dielectric phenomena Surface roughening 4H SiC International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia. 10%-N2O nitrided SiO2 gate on n-type 4H SiC has been used to investigate macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through the oxide. Non-contact mode atomic force microscope (AFM) and conductive AFM have been employed for the nanoscopic analyses, while macroscopic analyses have been performed by x-ray reflectivity and Semiconductor Parameter Analyser (SPA). From the nanoscopic analyses, it has found that the rougher the interface, the lower the leakage current. However, there is no relationship between the interface roughness obtained from nanoscopic measurement by AFM and leakage current density from macroscopic measurement by SPA. 2010-08-24T08:08:28Z 2010-08-24T08:08:28Z 2010-06-09 Article p.169-173 978-967-5760-02-0 http://hdl.handle.net/123456789/9054 en Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010 Universiti Malaysia Perlis School of Materials Engineering & School of Environmental Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Semiconductor-insulator interfaces
Dielectric phenomena
Surface roughening
4H SiC
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
spellingShingle Semiconductor-insulator interfaces
Dielectric phenomena
Surface roughening
4H SiC
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Kuan, Yew Cheong
Wei, Chong Goh
Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
description International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
author2 cheong@eng.usm.my
author_facet cheong@eng.usm.my
Kuan, Yew Cheong
Wei, Chong Goh
format Article
author Kuan, Yew Cheong
Wei, Chong Goh
author_sort Kuan, Yew Cheong
title Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
title_short Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
title_full Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
title_fullStr Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
title_full_unstemmed Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
title_sort macro and nanoscopic characteristics of sic-sio2 interface roughness and leakage current through vacuum annealed thermally nitrided sio2 gate on 4h-sic
publisher Universiti Malaysia Perlis
publishDate 2010
url http://dspace.unimap.edu.my/xmlui/handle/123456789/9054
_version_ 1643789378791669760
score 13.214268

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