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Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC

International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.

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Bibliographic Details
Main Authors: Kuan, Yew Cheong, Wei, Chong Goh
Other Authors: cheong@eng.usm.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2010
Subjects:
Semiconductor-insulator interfaces
Dielectric phenomena
Surface roughening
4H SiC
International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/9054
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Summary:International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.

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