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A silicon-oxide-silicon vertically separated electrode nanogap device structure

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Main Authors: Noor, N. H. M., Uda, Hashim, Prof. Dr., Muhamad Emi Azry, Shohini, Nuri, A. M. M.
Format: Working Paper
Language:English
Published: American Institute of Physics 2010
Subjects:
Capacitance
Nanofabrication
Nanogap
Silicon contacts
International Conference on Nanoscience and Nanotechnology 2008
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/8824
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spelling my.unimap-88242010-08-18T07:11:14Z A silicon-oxide-silicon vertically separated electrode nanogap device structure Noor, N. H. M. Uda, Hashim, Prof. Dr. Muhamad Emi Azry, Shohini Nuri, A. M. M. Capacitance Nanofabrication Nanogap Silicon contacts International Conference on Nanoscience and Nanotechnology 2008 Link to publisher's homepage at http://proceedings.aip.org/ In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different oxide thickness), and we show that this vertically separated nanogap is better at providing accurate and conclusive results than a standard setup. The results demonstrate that this nanogap sensor presents a powerful potential platform for identifying conformational states of molecular scale events. 2010-08-18T07:11:14Z 2010-08-18T07:11:14Z 2009-06-01 Working Paper Vol. 1136, 2009, p.499-503 0094-243X http://link.aip.org/link/?APCPCS/1136/499/1 http://hdl.handle.net/123456789/8824 en Proceedings of the International Conference on Nanoscience and Nanotechnology 2008 American Institute of Physics
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Capacitance
Nanofabrication
Nanogap
Silicon contacts
International Conference on Nanoscience and Nanotechnology 2008
spellingShingle Capacitance
Nanofabrication
Nanogap
Silicon contacts
International Conference on Nanoscience and Nanotechnology 2008
Noor, N. H. M.
Uda, Hashim, Prof. Dr.
Muhamad Emi Azry, Shohini
Nuri, A. M. M.
A silicon-oxide-silicon vertically separated electrode nanogap device structure
description Link to publisher's homepage at http://proceedings.aip.org/
format Working Paper
author Noor, N. H. M.
Uda, Hashim, Prof. Dr.
Muhamad Emi Azry, Shohini
Nuri, A. M. M.
author_facet Noor, N. H. M.
Uda, Hashim, Prof. Dr.
Muhamad Emi Azry, Shohini
Nuri, A. M. M.
author_sort Noor, N. H. M.
title A silicon-oxide-silicon vertically separated electrode nanogap device structure
title_short A silicon-oxide-silicon vertically separated electrode nanogap device structure
title_full A silicon-oxide-silicon vertically separated electrode nanogap device structure
title_fullStr A silicon-oxide-silicon vertically separated electrode nanogap device structure
title_full_unstemmed A silicon-oxide-silicon vertically separated electrode nanogap device structure
title_sort silicon-oxide-silicon vertically separated electrode nanogap device structure
publisher American Institute of Physics
publishDate 2010
url http://dspace.unimap.edu.my/xmlui/handle/123456789/8824
_version_ 1643789215877562368
score 13.214268

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