Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas
Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, P...
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Universiti Malaysia Pahang
2010
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my.unimap-86582010-08-13T06:45:37Z Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas Riyaz Ahmad, Mohamed Ali Ahmad Nasrull, Mohamed Nafarizal, Nayan Aluminum thin film Aluminum Nitride Nitrogen Gas Furnace, Scanning Electron Microscope (SEM) X- ray diffraction (XRD) Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia. The morphology evolution of aluminum (Al) thin film in the present of Nitrogen (N2) gas has been studied. The Al thin film has been fabricated on silicon (Si) substrate using aluminum evaporation system. Then, the substrate were placed inside the furnace with the present of N2 gas for approximately 30 minutes at certain temperature range from room temperature to 700 ºC. The influence of the N2 gas to the Al thin film in furnace were characterized by optical microscope, Scanning Electron Microscope (SEM), Energy Dispersive Spectrometer (EDS), I – V characterization and X- ray diffraction (XRD). It is found that, at above 600 ºC, we observed that the colour of Al thin film was changed drastically. We expect that this is because of the formation of AlN on the Si substrate. This statement is proved by the XRD and EDS characterization results. From the SEM images, we also found that the morphology of Al thin film changed drastically for the temperature above 600 ºC. In addition, the resistivity, which was evaluated from I – V characterization results, of the thin film decreased after the thermal process with N2 gas. 2010-08-13T06:45:37Z 2010-08-13T06:45:37Z 2009-06-20 Working Paper p.26-30 http://hdl.handle.net/123456789/8658 en Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009 Universiti Malaysia Pahang |
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Aluminum thin film Aluminum Nitride Nitrogen Gas Furnace, Scanning Electron Microscope (SEM) X- ray diffraction (XRD) Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) |
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Aluminum thin film Aluminum Nitride Nitrogen Gas Furnace, Scanning Electron Microscope (SEM) X- ray diffraction (XRD) Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) Riyaz Ahmad, Mohamed Ali Ahmad Nasrull, Mohamed Nafarizal, Nayan Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas |
| description |
Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on
June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia. |
| format |
Working Paper |
| author |
Riyaz Ahmad, Mohamed Ali Ahmad Nasrull, Mohamed Nafarizal, Nayan |
| author_facet |
Riyaz Ahmad, Mohamed Ali Ahmad Nasrull, Mohamed Nafarizal, Nayan |
| author_sort |
Riyaz Ahmad, Mohamed Ali |
| title |
Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas |
| title_short |
Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas |
| title_full |
Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas |
| title_fullStr |
Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas |
| title_full_unstemmed |
Effect of thermal processes on Al thin film in the present of nitrogen (N2) gas |
| title_sort |
effect of thermal processes on al thin film in the present of nitrogen (n2) gas |
| publisher |
Universiti Malaysia Pahang |
| publishDate |
2010 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/8658 |
| _version_ |
1643789203283116032 |
| score |
13.222552 |