Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition
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American Institute of Physics
2010
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my.unimap-86372013-11-20T03:54:02Z Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition Ruslinda, Abd. Rahim Uda, Hashim, Prof. Dr. Fukuda, Hisashi Tada, Yoshihiro Wainai, Noriyuki Uesugi, Katsuhiro Shimoyama, Yuhei Atomic force microscopy Carbon Focused ion beam Nanocrystal Organic thin film transistor Raman spectroscopy International Conference on Nanoscience and Nanotechnology (ICONN) Link to publisher's homepage at http://scitation.aip.org/ Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of low energy Ga+ ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 degree celcius by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stick onto SiO2 films. The characteristic of the OTFTs operated at negative gate bias shows the p-channel enhancement behavior, and shows the most saturation behavior. 2010-08-13T00:59:09Z 2010-08-13T00:59:09Z 2009-06-01 Working Paper Vol. 1136, p.297-301 0094-243X http://link.aip.org/link/?APCPCS/1136/297/1 http://hdl.handle.net/123456789/8637 en Proceedings of the International Conference on Nanoscience and Nanotechnology (ICONN) 2008 American Institute of Physics |
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Atomic force microscopy Carbon Focused ion beam Nanocrystal Organic thin film transistor Raman spectroscopy International Conference on Nanoscience and Nanotechnology (ICONN) |
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Atomic force microscopy Carbon Focused ion beam Nanocrystal Organic thin film transistor Raman spectroscopy International Conference on Nanoscience and Nanotechnology (ICONN) Ruslinda, Abd. Rahim Uda, Hashim, Prof. Dr. Fukuda, Hisashi Tada, Yoshihiro Wainai, Noriyuki Uesugi, Katsuhiro Shimoyama, Yuhei Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| description |
Link to publisher's homepage at http://scitation.aip.org/ |
| format |
Working Paper |
| author |
Ruslinda, Abd. Rahim Uda, Hashim, Prof. Dr. Fukuda, Hisashi Tada, Yoshihiro Wainai, Noriyuki Uesugi, Katsuhiro Shimoyama, Yuhei |
| author_facet |
Ruslinda, Abd. Rahim Uda, Hashim, Prof. Dr. Fukuda, Hisashi Tada, Yoshihiro Wainai, Noriyuki Uesugi, Katsuhiro Shimoyama, Yuhei |
| author_sort |
Ruslinda, Abd. Rahim |
| title |
Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| title_short |
Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| title_full |
Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| title_fullStr |
Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| title_full_unstemmed |
Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| title_sort |
organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| publisher |
American Institute of Physics |
| publishDate |
2010 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/8637 |
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1643789199886778368 |
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13.214268 |