Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

• 主要作者: Noraini, Othman
• 其他作者: Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr.
• 格式: Thesis
• 语言: English
• 出版: Universiti Malaysia Perlis (UniMAP) 2017
• 主题: Metal oxide semiconductors, Complementary; Electric insulators and insulation; Metal oxide semiconductor field-effect transistors; Silicon-on-insulator (SOI)
• 在线阅读: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77998

Doctor of Philosophy in Microelectronic Engineering