Cover Image

Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes

Link to publisher's homepage at http://ijneam.unimap.edu.my

Saved in:
Bibliographic Details
Main Authors: Mohd Syafiq, Mispan, Aiman Zakwan, Jidin, Hafez, Sarkawi, Haslinah, Mohd Nasir
Other Authors: syafiq.mispan@utem.edu.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
Physical Unclonable Function
FinFET
Process variations
Hardware security
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/74877
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-74877
record_format dspace
spelling my.unimap-748772022-03-31T01:55:27Z Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes Mohd Syafiq, Mispan Aiman Zakwan, Jidin Hafez, Sarkawi Haslinah, Mohd Nasir syafiq.mispan@utem.edu.my Physical Unclonable Function FinFET Process variations Hardware security Link to publisher's homepage at http://ijneam.unimap.edu.my As complementary metal-oxide semiconductor (CMOS) technology continues to scale down to ultra-deep submicron (UDSM) technology, the planar metal-oxide semiconductor field-effect transistor (MOSFET) structure reaches its limit. As the channel length shrinks, the gate no longer has full control over the channel which is not desirable. The subthreshold leakage from drain to source increases as the impact over the lost control of the MOS gate terminal, and further increase the total power consumption. To ensure the continuation of CMOS scaling and to overcome the aforementioned issues, the new MOS structure which is known as fin field-effect transistor (FinFET) is introduced. On the other hand, Physical Unclonable Function (PUF) is a promising hardware-fingerprinting technology that can exploit the intrinsic process variations of CMOS technology and manifest them into unique and random binary responses. These responses can be used as a cryptographic key or device specific identifier. Nevertheless, FinFET introduces an unknown impact of its process variations towards the performance of a particular PUF. In this paper, the suitability of the FinFET technology node for a PUF as a device-specific identifier or secret key is evaluated. One of the memory-PUFs, known as static random-access memory PUF (SRAM-PUF) has been used as a case study. Three different FinFET technology nodes which are 14-nm, 10-nm, and 7-nm have been evaluated. Our findings show that the uniqueness and uniformity of SRAM-PUF still hold, closely distributed at around an ideal value of 50%. The average reliability under temperature variations of -40ᴼC to 85ᴼC is approximately about 98%. The reliability of SRAM-PUF responses under the Vdd ramp-up time variations has no significant impact although showing declining patterns at fast ramp-up time. It can be concluded that FinFET technology shows no surprises on SRAM-PUF performances. 2022-03-31T01:55:27Z 2022-03-31T01:55:27Z 2021-10 Article International Journal of Nanoelectronics and Materials, vol.14(4), 2021, pages 345-356 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/74877 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Physical Unclonable Function
FinFET
Process variations
Hardware security
spellingShingle Physical Unclonable Function
FinFET
Process variations
Hardware security
Mohd Syafiq, Mispan
Aiman Zakwan, Jidin
Hafez, Sarkawi
Haslinah, Mohd Nasir
Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 syafiq.mispan@utem.edu.my
author_facet syafiq.mispan@utem.edu.my
Mohd Syafiq, Mispan
Aiman Zakwan, Jidin
Hafez, Sarkawi
Haslinah, Mohd Nasir
format Article
author Mohd Syafiq, Mispan
Aiman Zakwan, Jidin
Hafez, Sarkawi
Haslinah, Mohd Nasir
author_sort Mohd Syafiq, Mispan
title Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes
title_short Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes
title_full Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes
title_fullStr Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes
title_full_unstemmed Performance evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET technology nodes
title_sort performance evaluation of sram-puf based on 7-nm, 10-nm and 14-nm finfet technology nodes
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/74877
_version_ 1729704819442057216
score 13.214268

Similar Items