Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009.
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Universiti Malaysia Perlis
2009
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my.unimap-71182009-09-03T01:55:31Z Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes Mazari, H. Benamara, Z. Ameur, K. Benseddik, N. Bonnaud, O. Olier, R. Gruzza, B. Al/GaAs diodes Barrier height Ru3+ ions Diodes, Semiconductor Gallium compounds Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009. The current-voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-GaAs and Al/p-GaAs diodes on GaAs substrate treated by Ru3+ ions are investigated and compared with characteristics of GaAs diodes on GaAs untreated substrates. The diodes does not have to show an ideal behaviour of I-V characteristic with an ideality factor of 1.13 and barrier height of 0.85 eV and 0.6 eV for Al/n-GaAs and Al/p-GaAs diodes respectively. The forward bias saturation current found with a big value (10-10A, 10-12 A) in the Al/n-GaAs (untreated) Schottky diodes compared with Al/n-GaAs (treated) diodes. Contrary the forward bias saturation current found with a small value (10-7 A, 10-6 A) in the Al/p-GaAs (untreated) Schottky diodes compared with Al/p-GaAs (treated) diodes. The energy distribution of interface states was determined from the forward bias I(V) characteristics. The interface states density found large in the Al/GaAs (treated by Ru3+ ions) structure comparing with the Al/GaAs (untreated) structure. 2009-09-03T01:55:31Z 2009-09-03T01:55:31Z 2009 Article International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 147-156. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/7118 en Universiti Malaysia Perlis |
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Universiti Malaysia Perlis |
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UniMAP Library |
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Asia |
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Malaysia |
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Universiti Malaysia Perlis |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Al/GaAs diodes Barrier height Ru3+ ions Diodes, Semiconductor Gallium compounds |
| spellingShingle |
Al/GaAs diodes Barrier height Ru3+ ions Diodes, Semiconductor Gallium compounds Mazari, H. Benamara, Z. Ameur, K. Benseddik, N. Bonnaud, O. Olier, R. Gruzza, B. Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes |
| description |
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009. |
| format |
Article |
| author |
Mazari, H. Benamara, Z. Ameur, K. Benseddik, N. Bonnaud, O. Olier, R. Gruzza, B. |
| author_facet |
Mazari, H. Benamara, Z. Ameur, K. Benseddik, N. Bonnaud, O. Olier, R. Gruzza, B. |
| author_sort |
Mazari, H. |
| title |
Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes |
| title_short |
Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes |
| title_full |
Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes |
| title_fullStr |
Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes |
| title_full_unstemmed |
Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes |
| title_sort |
influence of ru3+ ions at al/gaas interface on schottky diodes |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2009 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/7118 |
| _version_ |
1643788695822663680 |
| score |
13.18916 |