Description: Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009.

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Bibliographic Details
Main Authors:	Mazari, H., Benamara, Z., Ameur, K., Benseddik, N., Bonnaud, O., Olier, R., Gruzza, B.
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2009
Subjects:	Al/GaAs diodes Barrier height Ru3+ ions Diodes, Semiconductor Gallium compounds
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/7118
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Summary:	Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009.