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Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist

Link to publisher's homepage at http://www.nsti.org/Nanotech2006/

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Bibliographic Details
Main Authors: Mohammad Nuzaihan, Md Nor, Uda, Hashim, Nur Hamidah, Abdul Halim, Bajuri, S. N M
Format: Article
Language:English
Published: Nano Science and Technology Institute 2009
Subjects:
Electron beam lithography
ma-N 2405 resist
Nanowires
PMMA
Scanning electron microscope
Nanotechnology
Nanowires > Design and construction
Nanostructured materials
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/6977
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spelling my.unimap-69772009-08-18T03:58:51Z Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist Mohammad Nuzaihan, Md Nor Uda, Hashim Nur Hamidah, Abdul Halim Bajuri, S. N M Electron beam lithography ma-N 2405 resist Nanowires PMMA Scanning electron microscope Nanotechnology Nanowires -- Design and construction Nanostructured materials Link to publisher's homepage at http://www.nsti.org/Nanotech2006/ Experimental studies of nanowires formation are carried out by using Scanning Electron Microscope Based Electron Beam Lithography (EBL) Technique with critical dimensions in less than 100nm. In order to complete the design cycle for the best nanowires, many contributing factors are considered. These factors include electron beam resists, resolution, working area/write field, structure size, step size, beam current, dose factor, exposure parameters and exposure time. The nanowires are designed by the powerful RAITH ELPHY Quantum GDSII Editor. The RAITH ELPHY is a CAD program for EBL and directly transferred on the sample coated with positive tone and negative tone e-beam resist. Comparison dimensions of both e-beams resist are included and discussed in this paper. 2009-08-18T03:58:34Z 2009-08-18T03:58:34Z 2006 Article vol.3, p.266-269 0-9767985-9-X (CD) http://hdl.handle.net/123456789/6977 en Technical Proceedings of the Nanotechnology Conference and Trade Show (NSTI Nanotech 2006) Nano Science and Technology Institute
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Electron beam lithography
ma-N 2405 resist
Nanowires
PMMA
Scanning electron microscope
Nanotechnology
Nanowires -- Design and construction
Nanostructured materials
spellingShingle Electron beam lithography
ma-N 2405 resist
Nanowires
PMMA
Scanning electron microscope
Nanotechnology
Nanowires -- Design and construction
Nanostructured materials
Mohammad Nuzaihan, Md Nor
Uda, Hashim
Nur Hamidah, Abdul Halim
Bajuri, S. N M
Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
description Link to publisher's homepage at http://www.nsti.org/Nanotech2006/
format Article
author Mohammad Nuzaihan, Md Nor
Uda, Hashim
Nur Hamidah, Abdul Halim
Bajuri, S. N M
author_facet Mohammad Nuzaihan, Md Nor
Uda, Hashim
Nur Hamidah, Abdul Halim
Bajuri, S. N M
author_sort Mohammad Nuzaihan, Md Nor
title Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
title_short Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
title_full Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
title_fullStr Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
title_full_unstemmed Nanowire formation for single electron transistor using SEM based Electron Beam Lithography (EBL) technique: Positive tone vs negative tone e-beam resist
title_sort nanowire formation for single electron transistor using sem based electron beam lithography (ebl) technique: positive tone vs negative tone e-beam resist
publisher Nano Science and Technology Institute
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/6977
_version_ 1643788622124548096
score 13.214268

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