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A review: Properties of silicon carbide materials in MEMS application

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Main Authors: Noraini, Marsi, Burhanuddin, Yeop Majlis, Faisal Mohd, Yasin, Hafzaliza Erny, Zainal Abidin, Azrul Azlan, Hamzah
Other Authors: mnoraini@uthm.edu.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2021
Subjects:
MEMS
Silicon carbide
High temperature
Radiation
Sensor
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/69528
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spelling my.unimap-695282021-02-05T07:24:21Z A review: Properties of silicon carbide materials in MEMS application Noraini, Marsi Burhanuddin, Yeop Majlis Faisal Mohd, Yasin Hafzaliza Erny, Zainal Abidin Azrul Azlan, Hamzah mnoraini@uthm.edu.my MEMS Silicon carbide High temperature Radiation Sensor Link to publisher's homepage at http://ijneam.unimap.edu.my The paper presents the review properties of silicon carbide materials in the MEMS application. The study aims to explore silicon carbide in MEMS technology which considers the development of microscale and integrated devices that combine electronics, electrical and mechanical elements. MEMS has become a key area micro-device technology which incorporates materials, mechanical, electrical, chemical and optical disciplines as well as fluid engineering. The prevalence of MEMS technology in harsh environments has grown tremendously in recent years, especially at high temperatures up to 1240˚C, wider bandgap (2.3 – 3.4 eV), a higher breakdown field (30 × 105 V/cm), a higher thermal conductivity (3.2 – 4.9 W/cm- K), a higher saturation velocity (2.5 × 107 cm/s), higher oxidation, corrosive environments and higher radiation. Recent developments in robust MEMS for extreme environments such as MEMS pressure sensors have been widely used in ships, warships, gas turbine engines, cars and biomedical equipment. The growing demand for MEMS pressure sensors with high-temperature operating capabilities, mainly for automotive, gas turbine engine and aerospace applications was investigated from this study as alternative silicon carbide to silicon in the fabrication of these devices. 2021-02-05T07:24:21Z 2021-02-05T07:24:21Z 2020-12 Article International Journal of Nanoelectronics and Materials, vol.13(Special Issue), 2020, pages 113-128 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/69528 en NANOSYM, 2019; Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic MEMS
Silicon carbide
High temperature
Radiation
Sensor
spellingShingle MEMS
Silicon carbide
High temperature
Radiation
Sensor
Noraini, Marsi
Burhanuddin, Yeop Majlis
Faisal Mohd, Yasin
Hafzaliza Erny, Zainal Abidin
Azrul Azlan, Hamzah
A review: Properties of silicon carbide materials in MEMS application
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 mnoraini@uthm.edu.my
author_facet mnoraini@uthm.edu.my
Noraini, Marsi
Burhanuddin, Yeop Majlis
Faisal Mohd, Yasin
Hafzaliza Erny, Zainal Abidin
Azrul Azlan, Hamzah
format Article
author Noraini, Marsi
Burhanuddin, Yeop Majlis
Faisal Mohd, Yasin
Hafzaliza Erny, Zainal Abidin
Azrul Azlan, Hamzah
author_sort Noraini, Marsi
title A review: Properties of silicon carbide materials in MEMS application
title_short A review: Properties of silicon carbide materials in MEMS application
title_full A review: Properties of silicon carbide materials in MEMS application
title_fullStr A review: Properties of silicon carbide materials in MEMS application
title_full_unstemmed A review: Properties of silicon carbide materials in MEMS application
title_sort review: properties of silicon carbide materials in mems application
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2021
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/69528
_version_ 1698698617167020032
score 13.18916

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