Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET
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my.unimap-611192019-08-01T08:40:04Z Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET Babu, S. K. Suresh Youvanidha, A. Jackuline Moni, D. Divya, S. moni@karunya.edu Yttrium oxide Pulsed laser deposition Crystalline structure Field effect transistor High-K gate dielectric Link to publisher's homepage at http://ijneam.unimap.edu.my The paper focuses on the effect of the crystalline structure and surface morphology on the electrical properties of Yttrium oxide (Y2O3) thin films. The impact on the change in substrate temperature from ambient to 650°C in low oxygen pressure (0.0034mbar) was realized by change in crystallinity and morphology. The XRD result shows the preferred orientation along the (400) plane. The effect of substrate temperature on the crystal structure has been studied and the same impact has been observed in film morphology using scanning electron microscopy. The higher dielectric constant of 21 was observed at room temperature deposition. The transfer characteristic of Y2O3 gate dielectric based Si-MOSFET gives current ratio ION/IOFF of 107 and threshold voltage of -2.8V. Furthermore, from output characteristics, the obtained Idss is 0.415 mA. The high ION/IOFF, makes it suitable for digital gates, optical electronics, SMPS and portable electronic applications. 2019-08-01T08:40:04Z 2019-08-01T08:40:04Z 2019-07 Article International Journal of Nanoelectronics and Materials, vol.12(3), 2019, pages 339-348 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61119 en Universiti Malaysia Perlis (UniMAP) |
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Yttrium oxide Pulsed laser deposition Crystalline structure Field effect transistor High-K gate dielectric |
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Yttrium oxide Pulsed laser deposition Crystalline structure Field effect transistor High-K gate dielectric Babu, S. K. Suresh Youvanidha, A. Jackuline Moni, D. Divya, S. Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET |
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Link to publisher's homepage at http://ijneam.unimap.edu.my |
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moni@karunya.edu |
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moni@karunya.edu Babu, S. K. Suresh Youvanidha, A. Jackuline Moni, D. Divya, S. |
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Article |
author |
Babu, S. K. Suresh Youvanidha, A. Jackuline Moni, D. Divya, S. |
author_sort |
Babu, S. K. Suresh |
title |
Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET |
title_short |
Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET |
title_full |
Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET |
title_fullStr |
Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET |
title_full_unstemmed |
Effect of crystallinity and morphology on the electrical properties of Y2O3 thin films prepared by pulsed laser deposition for MOSFET |
title_sort |
effect of crystallinity and morphology on the electrical properties of y2o3 thin films prepared by pulsed laser deposition for mosfet |
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Universiti Malaysia Perlis (UniMAP) |
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2019 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61119 |
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1643806583629545472 |
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13.214268 |