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2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1, 2009.

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Main Authors: Benseddik, Nadia, Amrani, Mohammed, Benamara, Zineb, Mohammed-Brahim, Tayeb
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2009
Subjects:
Silicon > Electric properties
Polysilicon
Silicon
Diodes, Semiconductor
Diodes, Schottky-barrier
Crystals
Silicon crystals
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/5338
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spelling my.unimap-53382009-11-25T08:40:47Z 2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods Benseddik, Nadia Amrani, Mohammed Benamara, Zineb Mohammed-Brahim, Tayeb Silicon -- Electric properties Polysilicon Silicon Diodes, Semiconductor Diodes, Schottky-barrier Crystals Silicon crystals Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1, 2009. The aim of this work is to compare the quality of the Schottky contact obtained between Silver and the un-doped polysilicon layer deposited on glass substrate (Corning 1737) by using two techniques: Lower Pressure Chemical Vapor deposition LPCVD (LPCVD sample) and Sub Atmospheric Pressure Chemical Vapor Deposition SAPCVD (SAPCVD sample). A non ideal measured foward bias I-V characteristic has been observed. The elctrical parameters are evaluated such as ideality factor (4.94 and 6.46), barrier height (0.57 eV and 0.50 eV), saturation current (6.74x10ˉ³ mA and 2.14x10ˉ² mA) and series resistance (960Ω and 2300Ω), respectively on LPCVD and SAPCVD samples. Two-dimensional (2D) model of I-V characteristics taking into account the localization of traps states in the grain boundaries is developed. We are also considered the U-distribution of traps states in the band gap. A good adjustment is obtained between measurement and simulation of I-V characteristics and gives the energetic traps states distribution. The comparison of the performance of the two polysilicon layer deposition techniques has been analyzed and discussed. The experimental current curves are well fitted by this model which gives the energetic traps states distribution in the band gap. A good quality polycrystalline can be obtained using LPCVD technique but it is possible to deposit films with SAPCVD technique which it may be interesting candidate for the fabrication of solar cell. 2009-04-06T13:38:45Z 2009-04-06T13:38:45Z 2009 Article International Journal of Nanoelectronics and Materials, vol. 2 (1), 2009, pages 75-89. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/5338 http://www.unimap.edu.my en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon -- Electric properties
Polysilicon
Silicon
Diodes, Semiconductor
Diodes, Schottky-barrier
Crystals
Silicon crystals
spellingShingle Silicon -- Electric properties
Polysilicon
Silicon
Diodes, Semiconductor
Diodes, Schottky-barrier
Crystals
Silicon crystals
Benseddik, Nadia
Amrani, Mohammed
Benamara, Zineb
Mohammed-Brahim, Tayeb
2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
description Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1, 2009.
format Article
author Benseddik, Nadia
Amrani, Mohammed
Benamara, Zineb
Mohammed-Brahim, Tayeb
author_facet Benseddik, Nadia
Amrani, Mohammed
Benamara, Zineb
Mohammed-Brahim, Tayeb
author_sort Benseddik, Nadia
title 2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
title_short 2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
title_full 2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
title_fullStr 2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
title_full_unstemmed 2D-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by LPCVD and SAPCVD methods
title_sort 2d-modeling for the simulation of current-voltage characteristics in polysilicon schottky diode deposited by lpcvd and sapcvd methods
publisher Universiti Malaysia Perlis
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/5338
_version_ 1643788365768687616
score 13.222552

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