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Design and fabrication of silicon nanowire based sensor

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Main Authors: Siti Fatimah, Abd Rahman, Nor Azah, Yusof, Prof. Dr., Uda, Hashim, Prof. Dr., Mohammad Nuzaihan, Md Nor
Other Authors: azahy@upm.edu.my
Format: Article
Language:English
Published: Electrochemical Science Group (ESG) 2014
Subjects:
Electron beam lithography
Ph detection
Resistivity
Silicon nanowire
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/34976
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spelling my.unimap-349762014-06-02T07:46:47Z Design and fabrication of silicon nanowire based sensor Siti Fatimah, Abd Rahman Nor Azah, Yusof, Prof. Dr. Uda, Hashim, Prof. Dr. Mohammad Nuzaihan, Md Nor azahy@upm.edu.my uda@unimap.edu.my m.nuzaihan@unimap.edu.my Electron beam lithography Ph detection Resistivity Silicon nanowire Link to publisher's homepage at http://www.electrochemsci.org/ This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which involved Scanning Electron Microscope based Electron Beam Lithography method. The silicon nanowires are well developed with the smallest dimension is 65nm in width. The effect of line width and exposure dose on the pattern structure is investigated experimentally using the negative photoresist ma-N2403 for EBL. The exposure doses for the resist layer are varied in the range of 50μC/cm2 to 180μC/cm2 at 20 kV accelerating voltage with a beam current of 0.075nA. The nanowires resist masks are well developed with dimension less than 100 nm in width for the dose exposure parameters of 80μC/cm2, 100μC/cm2 and 120μC/cm2. Subsequently, the two metal electrodes which are designated as source and drain are fabricated on top of individual nanowire using conventional lithography process. Morphological, electrical and chemical characteristics have been proposed to verify the outcome of the fabricated device. Finally, the fabricated device is performed as pH level detection. Three types of standard aqueous pH buffer buffer solutions which are pH 4, pH 7 and pH 10 are used to test the electrical response of the device. The SiNWs sensor show the highest resistance value for pH 4 and the lowest resistance value for pH 10. In terms of sensitivity, the device with smaller nanowire is found to be more sensitive than larger nanowire as a result of the high surface-to-volume ratio. 2014-06-02T07:46:47Z 2014-06-02T07:46:47Z 2013 Article International Journal of Electrochemical Science, vol. 8(9), 2013, pages 10946-10960 1452-3981 http://www.electrochemsci.org/list13.htm#issue9 http://dspace.unimap.edu.my:80/dspace/handle/123456789/34976 en Electrochemical Science Group (ESG)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Electron beam lithography
Ph detection
Resistivity
Silicon nanowire
spellingShingle Electron beam lithography
Ph detection
Resistivity
Silicon nanowire
Siti Fatimah, Abd Rahman
Nor Azah, Yusof, Prof. Dr.
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
Design and fabrication of silicon nanowire based sensor
description Link to publisher's homepage at http://www.electrochemsci.org/
author2 azahy@upm.edu.my
author_facet azahy@upm.edu.my
Siti Fatimah, Abd Rahman
Nor Azah, Yusof, Prof. Dr.
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
format Article
author Siti Fatimah, Abd Rahman
Nor Azah, Yusof, Prof. Dr.
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
author_sort Siti Fatimah, Abd Rahman
title Design and fabrication of silicon nanowire based sensor
title_short Design and fabrication of silicon nanowire based sensor
title_full Design and fabrication of silicon nanowire based sensor
title_fullStr Design and fabrication of silicon nanowire based sensor
title_full_unstemmed Design and fabrication of silicon nanowire based sensor
title_sort design and fabrication of silicon nanowire based sensor
publisher Electrochemical Science Group (ESG)
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/34976
_version_ 1643797667481911296
score 13.222552

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