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Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique

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Main Authors: Uda, Hashim, Prof. Dr., Tijjani Adam, Shuwa, Nik Hazura, Nik Hamat, Siti Fatimah
Other Authors: uda@unimap.edu.my
Format: Article
Language:English
Published: AENSI Publications 2013
Subjects:
Ultra shallow junction
Simulation
TSUPREM-4
Thermal diffusion
Semiconductor
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/26528
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spelling my.unimap-265282014-04-08T09:01:32Z Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique Uda, Hashim, Prof. Dr. Tijjani Adam, Shuwa Nik Hazura, Nik Hamat Siti Fatimah uda@unimap.edu.my Ultra shallow junction Simulation TSUPREM-4 Thermal diffusion Semiconductor Link to publisher's homepage at http://www.aensiweb.com/jasr.html Ultra shallow junction fabrication in large scaled integrated (ULSI) technology is one of the difficult challenges in device manufacturing. Low energy ion implantation is the most widely used technique at present to form ultra shallow junction but this method has some limitations such as crystal damage, however, many researches has been done to overcome this but It seems difficult to do away with this limitation . An ultra high shallow junction formation of < 30nm was proposed through thermal diffusion from spin-on dopants into silicon, this study was carried out by simulation using TSUPREM-4 from Synopsys Inc to determine the junction depth and the sheet resistance in order to fulfill the standard semiconductor device design requirements. Ultra shallow junction which is defined to be less than 30 nm in depth was obtained through this simulation using very simple and easy spin-on dopants technique. This economical spin-on dopants (SOD) technique is proven as one of promising method for shallow junction formation in future generations with little or no device structural damage or process limitation 2013-07-10T02:03:29Z 2013-07-10T02:03:29Z 2012 Article Journal of Applied Sciences Research, vol. 8(2), 2012, pages 1154-1161 1819-544X http://www.aensiweb.com/jasr/jasr/2012/1154-1161.pdf http://www.aensiweb.com/jasr/jasr_february_2012.html http://hdl.handle.net/123456789/26528 en AENSI Publications
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Ultra shallow junction
Simulation
TSUPREM-4
Thermal diffusion
Semiconductor
spellingShingle Ultra shallow junction
Simulation
TSUPREM-4
Thermal diffusion
Semiconductor
Uda, Hashim, Prof. Dr.
Tijjani Adam, Shuwa
Nik Hazura, Nik Hamat
Siti Fatimah
Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique
description Link to publisher's homepage at http://www.aensiweb.com/jasr.html
author2 uda@unimap.edu.my
author_facet uda@unimap.edu.my
Uda, Hashim, Prof. Dr.
Tijjani Adam, Shuwa
Nik Hazura, Nik Hamat
Siti Fatimah
format Article
author Uda, Hashim, Prof. Dr.
Tijjani Adam, Shuwa
Nik Hazura, Nik Hamat
Siti Fatimah
author_sort Uda, Hashim, Prof. Dr.
title Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique
title_short Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique
title_full Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique
title_fullStr Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique
title_full_unstemmed Shallow junction formation: A simulation based study of thermal diffusion by spin-on-dopants technique
title_sort shallow junction formation: a simulation based study of thermal diffusion by spin-on-dopants technique
publisher AENSI Publications
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/26528
_version_ 1643794974423121920
score 13.160551

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