The study of the effect of MOS transistor scaling on the critical device parameters

• 主要作者: Zazurina Abd Rahman
• 其他作者: Ramzan Mat Ayub (Advisor)
• 格式: Learning Object
• 语言: English
• 出版: Universiti Malaysia Perlis 2008
• 主题: MOS transistor; Integrated circuits; Semiconductors; Metal oxide semiconductors; Metal oxide semiconductors > Mathematical models; Transistors; Metal oxide semiconductor field-effect transistors
• 在线阅读: http://dspace.unimap.edu.my/xmlui/handle/123456789/2342

Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...