The study of the effect of MOS transistor scaling on the critical device parameters
Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...
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Universiti Malaysia Perlis
2008
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my.unimap-23422008-10-08T03:25:01Z The study of the effect of MOS transistor scaling on the critical device parameters Zazurina Abd Rahman Ramzan Mat Ayub (Advisor) MOS transistor Integrated circuits Semiconductors Metal oxide semiconductors Metal oxide semiconductors -- Mathematical models Transistors Metal oxide semiconductor field-effect transistors Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated design, higher speed, lower supply voltage, which revolutionized the information and communication (ICT) technology. This report presents an investigation into the study of the effect of MOS transistor scaling on the critical device parameters. The parameters understudy are threshold voltage, on and off state leakage current, and short channel effect on sub-threshold characteristics, that have a direct influence on the integrated circuit (ICs) performance. An initial research found that, among the process parameters involved in the manufacture of devices, gate length has the most influential effect on those parameters. This study showed, for the MOSFET with gate length below one-tenths of a micrometer, has an operational problems. The study also proved that, producing MOSFET with channel lengths much smaller than a micrometer is a challenge, and the difficulties of semiconductor device fabrication are always a limiting factor in advancing integrated circuit technology. 2008-10-08T03:25:01Z 2008-10-08T03:25:01Z 2007-04 Learning Object http://hdl.handle.net/123456789/2342 en Universiti Malaysia Perlis School of Microelectronic Engineering |
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MOS transistor Integrated circuits Semiconductors Metal oxide semiconductors Metal oxide semiconductors -- Mathematical models Transistors Metal oxide semiconductor field-effect transistors Zazurina Abd Rahman The study of the effect of MOS transistor scaling on the critical device parameters |
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Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated design, higher speed, lower supply voltage, which revolutionized the information and communication (ICT) technology. This report presents an investigation into the study of the effect of MOS transistor scaling on the critical device parameters. The parameters understudy are threshold voltage, on and off state leakage current, and short channel effect on sub-threshold characteristics, that have a direct influence on the integrated circuit (ICs) performance. An initial research found that, among the process parameters involved in the manufacture of devices, gate length has the most influential effect on those parameters. This study showed, for the MOSFET with gate length below one-tenths of a micrometer, has an operational problems. The study also proved that, producing MOSFET with channel lengths much smaller than a micrometer is a challenge, and the difficulties of semiconductor device fabrication are always a limiting factor in advancing integrated circuit technology. |
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Ramzan Mat Ayub (Advisor) |
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Ramzan Mat Ayub (Advisor) Zazurina Abd Rahman |
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Learning Object |
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Zazurina Abd Rahman |
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Zazurina Abd Rahman |
title |
The study of the effect of MOS transistor scaling on the critical device parameters |
title_short |
The study of the effect of MOS transistor scaling on the critical device parameters |
title_full |
The study of the effect of MOS transistor scaling on the critical device parameters |
title_fullStr |
The study of the effect of MOS transistor scaling on the critical device parameters |
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The study of the effect of MOS transistor scaling on the critical device parameters |
title_sort |
study of the effect of mos transistor scaling on the critical device parameters |
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Universiti Malaysia Perlis |
publishDate |
2008 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/2342 |
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1643787581621534720 |
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13.222552 |