The study of the effect of MOS transistor scaling on the critical device parameters

• 第一著者: Zazurina Abd Rahman
• その他の著者: Ramzan Mat Ayub (Advisor)
• フォーマット: Learning Object
• 言語: English
• 出版事項: Universiti Malaysia Perlis 2008
• 主題: MOS transistor; Integrated circuits; Semiconductors; Metal oxide semiconductors; Metal oxide semiconductors > Mathematical models; Transistors; Metal oxide semiconductor field-effect transistors
• オンライン･アクセス: http://dspace.unimap.edu.my/xmlui/handle/123456789/2342

Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...