The study of the effect of MOS transistor scaling on the critical device parameters

• المؤلف الرئيسي: Zazurina Abd Rahman
• مؤلفون آخرون: Ramzan Mat Ayub (Advisor)
• التنسيق: Learning Object
• اللغة: English
• منشور في: Universiti Malaysia Perlis 2008
• الموضوعات: MOS transistor; Integrated circuits; Semiconductors; Metal oxide semiconductors; Metal oxide semiconductors > Mathematical models; Transistors; Metal oxide semiconductor field-effect transistors
• الوصول للمادة أونلاين: http://dspace.unimap.edu.my/xmlui/handle/123456789/2342

Since the invention of transistors some 30 years ago, CMOS devices have been scale down aggressively in each technology generations to achieve higher integration density and performance. The device shrinkage allow denser circuits, more functions per floor space, more complicated and integrated desig...