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Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM

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Bibliographic Details
Main Author: Nur Syuhada Md.Desa
Other Authors: Nurjuliana Juhari (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Silicon oxide
Silicon > Oxidation
Scanning electron microscopes
Silicon
Integrated circuits > Design and construction
Semiconductors > Etching
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1992
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spelling my.unimap-19922008-09-08T12:52:45Z Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM Nur Syuhada Md.Desa Nurjuliana Juhari (Advisor) Silicon oxide Silicon -- Oxidation Scanning electron microscopes Silicon Integrated circuits -- Design and construction Semiconductors -- Etching Access is limited to UniMAP community. A study of aspect ratio performance on silicon oxide is developing to predict the oxide profile on surface of wafer. The main focus of this project is to perform and produce a high profile of silicon oxide under profiler meter, Atomic Force Microscopy (AFM) and Scanning Electron Microscope (SEM) but it is not easy to achieve the result as a desired patterns. Initially, this project was based on UV exposed lithography method and wet etching technique. Next, the process flow of developments was consisting of the parameter and recipes also discuss in detail. The positive resist is used as a mask during silicon oxide etching process. These oxide layers were etched by using wet etching technique. The rational used this techniques is because it widely used for the patterns size larger then 3µm. Buffered Oxide Etch (BOE) is use to remove the areas of silicon oxide unprotected by photoresist and exposed the silicon underneath. In order to produce a high aspect ratio silicon oxide profile and size reduction by thermal oxidation was investigated between compared the result among the different time etch and temperature. Finally, all the works and data results regarding from patterning process until characterization of silicon oxide profile was recorded in this project. 2008-09-08T12:52:45Z 2008-09-08T12:52:45Z 2008-03 Learning Object http://hdl.handle.net/123456789/1992 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon oxide
Silicon -- Oxidation
Scanning electron microscopes
Silicon
Integrated circuits -- Design and construction
Semiconductors -- Etching
spellingShingle Silicon oxide
Silicon -- Oxidation
Scanning electron microscopes
Silicon
Integrated circuits -- Design and construction
Semiconductors -- Etching
Nur Syuhada Md.Desa
Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
description Access is limited to UniMAP community.
author2 Nurjuliana Juhari (Advisor)
author_facet Nurjuliana Juhari (Advisor)
Nur Syuhada Md.Desa
format Learning Object
author Nur Syuhada Md.Desa
author_sort Nur Syuhada Md.Desa
title Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
title_short Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
title_full Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
title_fullStr Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
title_full_unstemmed Study of aspect ratio performance on Silicon Oxide wet etching by using Profilometer, AFM and SEM
title_sort study of aspect ratio performance on silicon oxide wet etching by using profilometer, afm and sem
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1992
_version_ 1643787516436807680
score 13.222552

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