Cover Image

Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth

Access is limited to UniMAP community.

Saved in:
Bibliographic Details
Main Author: Nur Ruzana Bohari
Other Authors: Mohd Hafiz Ismail (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Diffusion
Semiconductors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Silicon
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1991
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-1991
record_format dspace
spelling my.unimap-19912008-09-08T12:42:37Z Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth Nur Ruzana Bohari Mohd Hafiz Ismail (Advisor) Diffusion Semiconductors Negative metal oxide semiconductors (NMOS) Integrated circuits Silicon Access is limited to UniMAP community. This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and energy is dependence. The purposes are to calculate the diffusion coefficient with various value of temperature and energy (activation energy), yet to observe how of temperature and energy (implantation energy) correspondence to the junction depth by simulation. The calculation is done using MahCAD14 while TSUPREM4 software used to simulate the design. By these two (2) methods, the temperature and energy dependent in both diffusion coefficient and junction depth can be approved. There are the problems and limitations and how to overcome the difficulties. There are also recommendation and commercialization potential discussed in the final chapter of this thesis. 2008-09-08T12:42:37Z 2008-09-08T12:42:37Z 2008-04 Learning Object http://hdl.handle.net/123456789/1991 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Diffusion
Semiconductors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Silicon
spellingShingle Diffusion
Semiconductors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Silicon
Nur Ruzana Bohari
Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
description Access is limited to UniMAP community.
author2 Mohd Hafiz Ismail (Advisor)
author_facet Mohd Hafiz Ismail (Advisor)
Nur Ruzana Bohari
format Learning Object
author Nur Ruzana Bohari
author_sort Nur Ruzana Bohari
title Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
title_short Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
title_full Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
title_fullStr Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
title_full_unstemmed Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
title_sort temperature and energy dependence of diffusion in solid - effect of diffusion coefficient and junction depth
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1991
_version_ 1643787516136914944
score 13.223943

Similar Items