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Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide

Organized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia,

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Bibliographic Details
Main Authors: Nurjuliana, Juhari, Norzahiyah, Nordin, Noraini, Othman
Other Authors: nurjuliana@unimap.edu.my
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2011
Subjects:
Barium Strontium Titanate (BST) thin film
Indium (III) oxide
Barium Indium Strontium Titanate (BIST) thin film
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/17107
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spelling my.unimap-171072011-12-09T02:32:49Z Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide Nurjuliana, Juhari Norzahiyah, Nordin Noraini, Othman nurjuliana@unimap.edu.my Barium Strontium Titanate (BST) thin film Indium (III) oxide Barium Indium Strontium Titanate (BIST) thin film Organized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia, Ferroelectric Barium Strontium Titanate (BST) and doped with Indium (BIST) thin films are deposited using spin coating technique with spinning speed at 4000 rpm for 30 seconds. The percentage of Indium is varied with 2% and 10%. The post deposition annealing of the films are carried out at different temperature namely 700°C, 850°C and 950°C for a period of one day. At annealing temperature of 850°C for BIST 2% and 10% indicates that the current gives highest value when the forward bias voltage is applied for IV characteristics. Combination with lowest dopant concentration made BIST 2% can be classified into light dependent device. CV measurement for BIST 10% gives the higher result of capacitance value. 2011-12-09T02:32:49Z 2011-12-09T02:32:49Z 2009-08-12 Article 978-967-5048-55-5 http://hdl.handle.net/123456789/17107 en Proceedings of the IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM09) Institute of Electrical and Electronics Engineers (IEEE)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Barium Strontium Titanate (BST) thin film
Indium (III) oxide
Barium Indium Strontium Titanate (BIST) thin film
spellingShingle Barium Strontium Titanate (BST) thin film
Indium (III) oxide
Barium Indium Strontium Titanate (BIST) thin film
Nurjuliana, Juhari
Norzahiyah, Nordin
Noraini, Othman
Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide
description Organized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia,
author2 nurjuliana@unimap.edu.my
author_facet nurjuliana@unimap.edu.my
Nurjuliana, Juhari
Norzahiyah, Nordin
Noraini, Othman
format Article
author Nurjuliana, Juhari
Norzahiyah, Nordin
Noraini, Othman
author_sort Nurjuliana, Juhari
title Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide
title_short Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide
title_full Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide
title_fullStr Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide
title_full_unstemmed Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide
title_sort electrical studies of annealing effect in bst thin film with different doping concentration of indium (iii) oxide
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2011
url http://dspace.unimap.edu.my/xmlui/handle/123456789/17107
_version_ 1643790714037862400
score 13.214268

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