Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide

Organized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia,

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Bibliographic Details
Main Authors: Nurjuliana, Juhari, Norzahiyah, Nordin, Noraini, Othman
Other Authors: nurjuliana@unimap.edu.my
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2011
Subjects:
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/17107
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