Electrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxide

Organized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia,

Saved in:
Bibliographic Details
Main Authors: Nurjuliana, Juhari, Norzahiyah, Nordin, Noraini, Othman
Other Authors: nurjuliana@unimap.edu.my
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2011
Subjects:
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/17107
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Organized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia,