The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique
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Universiti Malaysia Perlis
2008
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| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/1356 |
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my.unimap-13562008-10-16T05:06:39Z The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique Noraishah Azman Ramzan Mat Ayub (Advisor) Very Large Scale Integration (VLSI) Electron Beam Lithography (EBL) Aluminium alloys Metal oxide semiconductors, Complementary Evaporation Semiconductor devices Integrated circuits Access is limited to UniMAP community. The degree to which deposited metals cover steps over topography is important to the yield and reliability of devices in very large scale integrations (VLSI). In evaporated and sputtered thin films, the most difficult steps to cover are those with straight walls. This is especially true with aluminum and its alloys. Metal to semiconductor contact step coverage has been studied as a function of evaporation process parameters. Contacts of different sizes, ranging from 5um to 20um have been designed and fabricated with the help of Electron Beam Lithography (EBL) system for high-resolution pattern transfer, using a standard CMOS process flow in Micro-fabrication Cleanroom Lab, UniMAP. Throughout the fabrication, wafers underwent the processes such as oxide deposition by PECVD, Lithography by EBL, wet and dry etches, photoresist stripping and so on. Aluminum was then deposited using thermal evaporator with varying process parameters. Characterization included grinding and polishing for cross sectioning, while high power microscope and scanning electron microscopy (SEM) techniques were employed for step coverage measurement. Experimental results shows that 20 μm metal step coverage is the only contact dimension can be investigated. The investigation is including the bottom step coverage and sidewall step coverage. 2008-07-02T02:51:35Z 2008-07-02T02:51:35Z 2007-03 Learning Object http://hdl.handle.net/123456789/1356 en Universiti Malaysia Perlis School of Microelectronic Engineering |
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Universiti Malaysia Perlis |
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UniMAP Library |
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Institutional Repository |
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Asia |
| country |
Malaysia |
| content_provider |
Universiti Malaysia Perlis |
| content_source |
UniMAP Library Digital Repository |
| url_provider |
http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Very Large Scale Integration (VLSI) Electron Beam Lithography (EBL) Aluminium alloys Metal oxide semiconductors, Complementary Evaporation Semiconductor devices Integrated circuits |
| spellingShingle |
Very Large Scale Integration (VLSI) Electron Beam Lithography (EBL) Aluminium alloys Metal oxide semiconductors, Complementary Evaporation Semiconductor devices Integrated circuits Noraishah Azman The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique |
| description |
Access is limited to UniMAP community. |
| author2 |
Ramzan Mat Ayub (Advisor) |
| author_facet |
Ramzan Mat Ayub (Advisor) Noraishah Azman |
| format |
Learning Object |
| author |
Noraishah Azman |
| author_sort |
Noraishah Azman |
| title |
The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique |
| title_short |
The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique |
| title_full |
The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique |
| title_fullStr |
The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique |
| title_full_unstemmed |
The Effect of Process Parameters on Metal Step Coverage for Aluminum by Evaporation Technique |
| title_sort |
effect of process parameters on metal step coverage for aluminum by evaporation technique |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2008 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/1356 |
| _version_ |
1643787264104333312 |
| score |
13.214268 |