Simulation on Effects of Different Types of Channel/Drain Engineering Structure on MOS Device Performance

This final year project is aimed to analyze the effects of three different types of channel/drain engineering structure on MOS transistor performance. As a project basis, a 0.35μm process recipe from UC Berkeley is used as reference. To proceed it, the other parameters need to be retained and only t...

Full description

Saved in:
Bibliographic Details
Main Author: Norazlina Mohd Amin
Other Authors: Noraini Othman (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1338
Tags: Add Tag
No Tags, Be the first to tag this record!
Be the first to leave a comment!
You must be logged in first