Temperature characteristics of Gate all around nanowire channel Si-TFET

• Main Authors: Agha, Firas Natheer Abdul-kadir, Hashim, Yasir, Jabbar, Waheb A.
• Format: Conference or Workshop Item
• Language: English
• Published: IOP Publishing 2021
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf; http://umpir.ump.edu.my/id/eprint/32198/; https://doi.org/10.1088/1742-6596/1755/1/012045

This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions.