Temperature sensitivity of silicon nanowire transistor based on channel length

This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-...

Full description

Saved in:
Bibliographic Details
Main Authors: AlAriqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format: Conference or Workshop Item
Language:English
Published: IEEE 2019
Subjects:
Online Access:http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf
http://umpir.ump.edu.my/id/eprint/24710/
https://doi.org/10.1109/ICMSAO.2019.8880360
Tags: Add Tag
No Tags, Be the first to tag this record!
Be the first to leave a comment!
You must be logged in first