Optical constants and electronic transition in hydrogenated silicon (Si: H) hin films deposited by Layer-by-Layer (LBL) deposition technique
Optical constants derived from optical transmission (T) and reflectance (R) spectra in the wavelength range of 220 to 2200 nm are presented in this paper for hydrogenated silicon (Si: H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using the layer-by-layer (LBL) depositi...
Saved in:
Main Authors: | Tong, G.B., Muhamad, M.R., Rahman, Saadah Abdul |
---|---|
Format: | Article |
Published: |
Penerbit Universiti Kebangsaan Malaysia
2011
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/7367/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Optical constants and electronic transition in hydrogenated silicon (Si:H) thin films deposited by layer-by-layer (LBL) deposition technique
by: Goh, Boon Tong, et al.
Published: (2011) -
Effects of Rf power on structural properties of Nc-Si:H Thin Films deposited by Layer-By-Layer (LbL) deposition technique
by: Tong, G.B., et al.
Published: (2012) -
Optical properties of annealed Si:H thin film prepared by layer-by-layer (LBL) deposition technique
by: Goh, Boon Tong, et al.
Published: (2010) -
Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power
by: Tong, G.B., et al.
Published: (2007) -
Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
by: Goh, Boon Tong, et al.
Published: (2012)