Effects of thermal annealing on the properties of highly reflective Nc-Si: H/A-Cnx: H multilayer films prepared by rf PECVD technique
The effects of thermal annealing in the range of 100-700°C on highly reflecting multilayer thin film consisting of 7 periods of alternating nc-Si:H/a-CNx:H layers prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD) deposition technique were investigated. The films were deposite...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/7357/1/Effects_Of_Thermal_Annealing_On_The_Properties_Of_Highly_Reflective_Nc-Si_HA-Cnx_H_Multilayer_Films_Prepared_By_rf_PECVD_Technique.pdf http://eprints.um.edu.my/7357/ |
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| Summary: | The effects of thermal annealing in the range of 100-700°C on highly reflecting multilayer thin film consisting of 7 periods of alternating nc-Si:H/a-CNx:H layers prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD) deposition technique were investigated. The films were deposited on quartz and <111> p-type c-Si substrate and were studied using ultra-violet-visible-near infrared (UV-VisNIR) and Fourier transform infrared (FTIR) spectroscopy. The as-deposited multilayered films show high reflectivity and wide stop band width at a wavelength of approximately 650 ± 60 nm and the value starts to reduce as the annealing temperature, TA increase. Its FTIR spectra showed the formation of Si-H and Si-H2 bonds in the ncSi:H layer and C=C, C=N, C�N, C-H and N-H bonds in a-CNx:H layer. The films remain thermally stable up to the TA of 400°C and then begin to degrade above this temperature. The results shows that both a-CNx:H and nc-Si:H were affected by heat treatment. |
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