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Effects of thermal annealing on the properties of highly reflective Nc-Si: H/A-Cnx: H multilayer films prepared by rf PECVD technique

The effects of thermal annealing in the range of 100-700°C on highly reflecting multilayer thin film consisting of 7 periods of alternating nc-Si:H/a-CNx:H layers prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD) deposition technique were investigated. The films were deposite...

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Bibliographic Details
Main Authors: Rashid, N.M.A., Ritikos, R., Goh, B.T., Gani, S.M.A., Muhamad, M.R., Rahman, S.A.
Format: Article
Language:English
Published: 2011
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7357/1/Effects_Of_Thermal_Annealing_On_The_Properties_Of_Highly_Reflective_Nc-Si_HA-Cnx_H_Multilayer_Films_Prepared_By_rf_PECVD_Technique.pdf
http://eprints.um.edu.my/7357/
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http://eprints.um.edu.my/7357/1/Effects_Of_Thermal_Annealing_On_The_Properties_Of_Highly_Reflective_Nc-Si_HA-Cnx_H_Multilayer_Films_Prepared_By_rf_PECVD_Technique.pdf
http://eprints.um.edu.my/7357/

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