Analysis of NBTI effects on read and write operations of 6t SRAM cells

• Main Authors: Zahari, Hashimah, Hussin, Hanim, Muhamad, Maizan, Soin, Norhayati, Abdul Wahab, Yasmin
• Format: Article
• Published: Taylor's University 2022
• Subjects: Q Science (General)
• Online Access: http://eprints.um.edu.my/43927/

Negative Bias Temperature Instability (NBTI) is an important reliability issue in CMOS devices that affects the performance of CMOS-based circuits. Therefore, it is vital to comprehend the impact of different defect mechanisms and wide operating conditions about stress and recovery time on the circuit’s performance to produce a reliable and acceptable design margin. In this work, the NBTI effects have been analysed on the 6T SRAM cell circuit designed using 16 nm FinFET technology. The performance affected by the NBTI reliability issues regarding propagation delay and power consumption in both operations, then read and write operations, were studied. The 6T SRAM performance was investigated based on different defect mechanisms, stress times and operating temperature conditions. There is about a 74-mV difference between the threshold voltage shift calculated using defects due to Nit and Nit combined with Not. The read delay was found to be unaffected by the stress time, while the write delay improved marginally during the 10 years stress time. The write delay of the 6T SRAM cell simulated using the Nit improved 0.4 after 10 years operation compared to when simulated using the Nit combine with Not. At 125 °C, the power consumption after 10 years of operation for the read operation was higher than the write operation, which is 4.09 µW and 0.443 µW`, respectively. The performance of the 6T SRAM cell was observed to be reliant on the category of defect mechanism, the static and dynamic simulation conditions, as well as the operating temperature. © School of Engineering, Taylor’s University.