Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED

• Main Authors: Samsudin, Muhammad Esmed Alif, Yusuf, Yusnizam, Zainal, Norzaini, Abu Bakar, Ahmad Shuhaimi, Zollner, Christian, Iza, Michael, DenBaars, Steven P.
• Format: Article
• Published: Emerald Group Publishing Ltd 2021
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.um.edu.my/28591/

Purpose The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate. Design/methodology/approach In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing...