Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor
Organic-inorganic hybrid perovskite could potentially be used to create field-effect transistors (FETs) with high field-effect mobility. However, the energy level mismatch at the deep valence band maximum perovskite-contact junction and morphological defects greatly limit the charge transport in the...
Saved in:
Main Authors: | , , , , |
---|---|
Format: | Article |
Published: |
Elsevier
2021
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/28064/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.um.eprints.28064 |
---|---|
record_format |
eprints |
spelling |
my.um.eprints.280642022-07-20T04:40:25Z http://eprints.um.edu.my/28064/ Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor Subramaniam, Y. Woon, Kai Lin Nakajima, H. Chaiprapa, J. Songsiriritthigul, P. Q Science (General) QC Physics Organic-inorganic hybrid perovskite could potentially be used to create field-effect transistors (FETs) with high field-effect mobility. However, the energy level mismatch at the deep valence band maximum perovskite-contact junction and morphological defects greatly limit the charge transport in the thin film. In this work, we demonstrated charge injection can be improved by introducing Nafion as a surface modifier on top of the Indium tin oxide. Incorporating poly (9-vinylcarbazole) PVK into a quasi-one-dimensional precursor solution induced preferential vertically orientated nanopillars as revealed by synchrotron-based two-dimensional grazing incident X-ray diffraction. This simultaneously reduced the grain boundaries and improved pin-hole free films. As a result, maximum hole mobility of 0.012 cm2/Vs was achieved with a reduction in the hysteresis. Our work demonstrated the dependence of FETs performance on the injection barrier and perovskite nanopillar microstructure. Elsevier 2021-11 Article PeerReviewed Subramaniam, Y. and Woon, Kai Lin and Nakajima, H. and Chaiprapa, J. and Songsiriritthigul, P. (2021) Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor. Synthetic Metals, 281. ISSN 0379-6779, DOI https://doi.org/10.1016/j.synthmet.2021.116901 <https://doi.org/10.1016/j.synthmet.2021.116901>. 10.1016/j.synthmet.2021.116901 |
institution |
Universiti Malaya |
building |
UM Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Malaya |
content_source |
UM Research Repository |
url_provider |
http://eprints.um.edu.my/ |
topic |
Q Science (General) QC Physics |
spellingShingle |
Q Science (General) QC Physics Subramaniam, Y. Woon, Kai Lin Nakajima, H. Chaiprapa, J. Songsiriritthigul, P. Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
description |
Organic-inorganic hybrid perovskite could potentially be used to create field-effect transistors (FETs) with high field-effect mobility. However, the energy level mismatch at the deep valence band maximum perovskite-contact junction and morphological defects greatly limit the charge transport in the thin film. In this work, we demonstrated charge injection can be improved by introducing Nafion as a surface modifier on top of the Indium tin oxide. Incorporating poly (9-vinylcarbazole) PVK into a quasi-one-dimensional precursor solution induced preferential vertically orientated nanopillars as revealed by synchrotron-based two-dimensional grazing incident X-ray diffraction. This simultaneously reduced the grain boundaries and improved pin-hole free films. As a result, maximum hole mobility of 0.012 cm2/Vs was achieved with a reduction in the hysteresis. Our work demonstrated the dependence of FETs performance on the injection barrier and perovskite nanopillar microstructure. |
format |
Article |
author |
Subramaniam, Y. Woon, Kai Lin Nakajima, H. Chaiprapa, J. Songsiriritthigul, P. |
author_facet |
Subramaniam, Y. Woon, Kai Lin Nakajima, H. Chaiprapa, J. Songsiriritthigul, P. |
author_sort |
Subramaniam, Y. |
title |
Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
title_short |
Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
title_full |
Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
title_fullStr |
Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
title_full_unstemmed |
Preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
title_sort |
preferential vertically oriented nanopillar perovskite induced by poly (9-vinylcarbazole) field-effect transistor |
publisher |
Elsevier |
publishDate |
2021 |
url |
http://eprints.um.edu.my/28064/ |
_version_ |
1739828432114548736 |
score |
13.160551 |