Fabrication and characterization of tungsten disulphide/silicon heterojunction photodetector for near infrared illumination
Tungsten disulphide (WS 2 ), a member of the transition metal dichalcogenide (TMD) family that is known for its superior optoelectronic properties is used in this work to fabricate a low cost and highly efficient photodetector for operation in the near infrared (NIR) region. The WS 2 /Si heterojunct...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Elsevier
2019
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/24341/ https://doi.org/10.1016/j.ijleo.2019.03.132 |
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