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Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon

Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated...

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Bibliographic Details
Main Authors: Al-Jumaili, Batool Eneaze Bandar, Talib, Zainal Abidin, L. Y., Josephine, Paiman, Suriati, M. Ahmed, Naser
Format: Article
Language:English
Published: The Malaysian Solid State Science and Technology Society 2016
Online Access:http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf
http://psasir.upm.edu.my/id/eprint/53564/
http://ufds.uofallujah.edu.iq/dspace/bitstream/123456789/1249/1/Photoelectric%20properties%20of%20Metal-Semiconductor-Metal%20Photodetector%20based%20on%20Porous%20Silicon.pdf
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http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf
http://psasir.upm.edu.my/id/eprint/53564/
http://ufds.uofallujah.edu.iq/dspace/bitstream/123456789/1249/1/Photoelectric%20properties%20of%20Metal-Semiconductor-Metal%20Photodetector%20based%20on%20Porous%20Silicon.pdf

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