405 nm ultraviolet photodetector based on tungsten disulphide thin film grown by drop casting method
In this work, a tungsten disulphide or WS2 based heterojunction photodetector device is fabricated on top of Si substrate by simple drop casting. Raman shifts are observed at 350.16 and 419.36 cm−1, confirming the successful growth of the WS2 and the non-stoichiometric WS2 layers which are verified...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
Taylor & Francis
2019
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| Online Access: | http://eprints.um.edu.my/24324/ https://doi.org/10.1080/09500340.2019.1682207 |
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