Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD
A smooth and dense surface of single-crystalline aluminium nitride thin films has been epitaxially grown on (0 0 0 1)-sapphire substrates by tailoring and optimizing the ammonia flux density during deposition. The aluminium nitride films were deposited by metal organic chemical vapour deposition usi...
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my.um.eprints.242462020-04-30T05:28:44Z http://eprints.um.edu.my/24246/ Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD Abd Rahman, Mohd Nazri Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Sulaiman, Abdullah Fadil Allif, Kamarul Zahir, Norhilmi Mohd Shuhaimi, Ahmad Q Science (General) QC Physics A smooth and dense surface of single-crystalline aluminium nitride thin films has been epitaxially grown on (0 0 0 1)-sapphire substrates by tailoring and optimizing the ammonia flux density during deposition. The aluminium nitride films were deposited by metal organic chemical vapour deposition using the pulsed atomic-layer epitaxy technique at a relatively low growth temperature for ammonia flux densities between 2.2 and 0.2 standard litres per minute (SLM). It is found that the ammonia flux of 0.6 SLM produced the best quality of aluminium nitride films. Field emission scanning electron microscopy as well as atomic force microscopy images revealed a smooth, crack-free and dense surface of aluminium nitride films with the lowest root mean square roughness of 1.61 nm. The in-plane compressive strain inside aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was examined by focusing on the transition of the E2 (high) peak frequency obtained from the Raman spectra. The lowest threading and mixed-edge dislocation densities were estimated to be 1.50 × 107 and 3.7 × 109 cm−2, respectively, which are comparable to those of state-of-the-art aluminium nitride thin films. © The Royal Society of Chemistry. Royal Society of Chemistry 2019 Article PeerReviewed Abd Rahman, Mohd Nazri and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Sulaiman, Abdullah Fadil and Allif, Kamarul and Zahir, Norhilmi Mohd and Shuhaimi, Ahmad (2019) Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm, 21 (12). pp. 2009-2017. ISSN 1466-8033 https://doi.org/10.1039/C9CE00014C doi:10.1039/C9CE00014C |
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Q Science (General) QC Physics Abd Rahman, Mohd Nazri Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Sulaiman, Abdullah Fadil Allif, Kamarul Zahir, Norhilmi Mohd Shuhaimi, Ahmad Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD |
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A smooth and dense surface of single-crystalline aluminium nitride thin films has been epitaxially grown on (0 0 0 1)-sapphire substrates by tailoring and optimizing the ammonia flux density during deposition. The aluminium nitride films were deposited by metal organic chemical vapour deposition using the pulsed atomic-layer epitaxy technique at a relatively low growth temperature for ammonia flux densities between 2.2 and 0.2 standard litres per minute (SLM). It is found that the ammonia flux of 0.6 SLM produced the best quality of aluminium nitride films. Field emission scanning electron microscopy as well as atomic force microscopy images revealed a smooth, crack-free and dense surface of aluminium nitride films with the lowest root mean square roughness of 1.61 nm. The in-plane compressive strain inside aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was examined by focusing on the transition of the E2 (high) peak frequency obtained from the Raman spectra. The lowest threading and mixed-edge dislocation densities were estimated to be 1.50 × 107 and 3.7 × 109 cm−2, respectively, which are comparable to those of state-of-the-art aluminium nitride thin films. © The Royal Society of Chemistry. |
format |
Article |
author |
Abd Rahman, Mohd Nazri Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Sulaiman, Abdullah Fadil Allif, Kamarul Zahir, Norhilmi Mohd Shuhaimi, Ahmad |
author_facet |
Abd Rahman, Mohd Nazri Talik, Noor Azrina Abdul Khudus, Muhammad Imran Mustafa Sulaiman, Abdullah Fadil Allif, Kamarul Zahir, Norhilmi Mohd Shuhaimi, Ahmad |
author_sort |
Abd Rahman, Mohd Nazri |
title |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD |
title_short |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD |
title_full |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD |
title_fullStr |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD |
title_full_unstemmed |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD |
title_sort |
ammonia flux tailoring on the quality of aln epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via mocvd |
publisher |
Royal Society of Chemistry |
publishDate |
2019 |
url |
http://eprints.um.edu.my/24246/ https://doi.org/10.1039/C9CE00014C |
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1665895223691051008 |
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13.18916 |