Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient
The effects of oxidation and nitridation temperatures (500–1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric cons...
Saved in:
Main Authors: | , |
---|---|
Format: | Article |
Published: |
Springer Verlag (Germany)
2012
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/13003/ http://link.springer.com/article/10.1007%2Fs13391-011-1067-x http://dx.doi.org/10.1007/s13391-011-1067-x |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.um.eprints.13003 |
---|---|
record_format |
eprints |
spelling |
my.um.eprints.130032015-03-11T03:24:31Z http://eprints.um.edu.my/13003/ Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient Wong, Y.H. Cheong, K.Y. TA Engineering (General). Civil engineering (General) The effects of oxidation and nitridation temperatures (500–1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric constant of 21.82 and electrical breakdown field of 13.6 MV cm−1 at a current density of 10−6 A cm−2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density of the oxide and the highest barrier height of conduction band offset between the oxide and semiconductor when compared with others. Springer Verlag (Germany) 2012-02 Article PeerReviewed Wong, Y.H. and Cheong, K.Y. (2012) Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient. Electronic Materials Letters, 8 (1). pp. 47-51. ISSN 1738-8090 http://link.springer.com/article/10.1007%2Fs13391-011-1067-x http://dx.doi.org/10.1007/s13391-011-1067-x |
institution |
Universiti Malaya |
building |
UM Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Malaya |
content_source |
UM Research Repository |
url_provider |
http://eprints.um.edu.my/ |
topic |
TA Engineering (General). Civil engineering (General) |
spellingShingle |
TA Engineering (General). Civil engineering (General) Wong, Y.H. Cheong, K.Y. Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient |
description |
The effects of oxidation and nitridation temperatures (500–1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric constant of 21.82 and electrical breakdown field of 13.6 MV cm−1 at a current density of 10−6 A cm−2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density of the oxide and the highest barrier height of conduction band offset between the oxide and semiconductor when compared with others. |
format |
Article |
author |
Wong, Y.H. Cheong, K.Y. |
author_facet |
Wong, Y.H. Cheong, K.Y. |
author_sort |
Wong, Y.H. |
title |
Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient |
title_short |
Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient |
title_full |
Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient |
title_fullStr |
Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient |
title_full_unstemmed |
Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient |
title_sort |
effects of oxidation and nitridation temperatures on electrical properties of sputtered zr thin film based on si in n2o ambient |
publisher |
Springer Verlag (Germany) |
publishDate |
2012 |
url |
http://eprints.um.edu.my/13003/ http://link.springer.com/article/10.1007%2Fs13391-011-1067-x http://dx.doi.org/10.1007/s13391-011-1067-x |
_version_ |
1643689435271790592 |
score |
13.18916 |