Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor

• Main Authors: Faris Azim Ahmad Fajri, Faris Azim, Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Hamid, Ahmad Noor, Abdul Aziz, Azni
• Format: Conference or Workshop Item
• Language: English; English
• Published: Springer Science and Business Media Deutschland GmbH 2022
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/99956/1/99956_Doping%20effect%20on%20bandgap%20energy.pdf; http://irep.iium.edu.my/99956/2/99956_Doping%20effect%20on%20bandgap%20energy_SCOPUS.pdf; http://irep.iium.edu.my/99956/; https://link.springer.com/chapter/10.1007/978-981-16-8903-1_5

This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (L...