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High photoluminescence intensity of heterostructure AlGaN-based DUV-LED through uniform carrier distribution

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with differe...

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Bibliographic Details
Main Authors: Hairol Aman, Mohammad Amirul, Ahmad Fajri, Faris Azim, Ahmad Noorden, Ahmad Fakhrurrazi, Daud, Suzairi, Bahadoran, Mahdi, Abdul Kadir, Muhammad Zamzuri
Format: Article
Language:English
English
Published: IOP Publishing 2023
Subjects:
QC Physics
Online Access:http://irep.iium.edu.my/101616/7/101616_High%20photoluminescence%20intensity%20of%20heterostructure.pdf
http://irep.iium.edu.my/101616/13/101616_High%20photoluminescence%20intensity%20of%20heterostructure_SCOPUS.pdf
http://irep.iium.edu.my/101616/
https://iopscience.iop.org/article/10.1088/1402-4896/aca43f/meta
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Internet

http://irep.iium.edu.my/101616/7/101616_High%20photoluminescence%20intensity%20of%20heterostructure.pdf
http://irep.iium.edu.my/101616/13/101616_High%20photoluminescence%20intensity%20of%20heterostructure_SCOPUS.pdf
http://irep.iium.edu.my/101616/
https://iopscience.iop.org/article/10.1088/1402-4896/aca43f/meta

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