Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation

• Main Authors: Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Muridan, Muridan, Norasmahan, Che Hak, Cik Rohaida, Mahat, Sarimah
• Format: Conference or Workshop Item
• Language: English; English
• Published: Scientific.Net 2017
• Subjects: T Technology (General)
• Online Access: http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf; http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf; http://irep.iium.edu.my/63004/; https://www.scientific.net/MSF.888.348

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor s...