Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

• Main Authors: Ahmad Fauzi, Dhiyauddin, Alang Md Rashid, Nahrul Khair, Abdul Karim, Julia, Mohamed Zin, Mohamed Rawi, Hasbullah, Nurul Fadzlin, Sheik Fareed, O A
• Format: Article
• Language: English
• Published: IOP Publishing 2013
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/33632/1/electrical_performances.pdf; http://irep.iium.edu.my/33632/; http://iopscience.iop.org/1757-899X/53/1/012029

This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-volt...